effects of the spacer length on the high-frequency nanoscale field effect diode performance

the performance of nanoscale field effect diodes as a function of the spacer length between two gates is investigated. our numerical results show that the ion/ioff ratio which is a significant parameter in digital application can be varied from 101 to 104 for s-fed as the spacer length between two gates increases whereas this ratio is approximately constant for m-fed. the high-frequency performance of feds is investigated and the cut-off frequency of the intrinsic transistor without parasitic capacitance is calculated. the figures of merit including intrinsic gate delay time and energy-delay product have been studied for the field effect diodes which are interesting candidates for future logic applications.